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Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987).

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05 December 2007

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Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987).

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current04:07, 5 December 2007Thumbnail for version as of 04:07, 5 December 2007743 × 973 (87 KB)Sgptch (talk | contribs)Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987).

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