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English: For different EUV wavelengths, the angular dependence of the reflectance from the EUV mask multilayer is different,[1][2] resulting in effectively different pupils. Source-mask optimization would exclude portions of these pupils,[3] leading to different results for different wavelengths. Both 13.4 nm and 13.5 nm are used in EUV exposure of resists, since they are well within the 2% bandwidth. The angular dependence of reflectance with off-axis central angle results in nonuniform distribution across the pupil.[4]
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Author Guiding light
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Date/Time Dimensions User Comment
2019-07-20 22:18:40 611 × 327 Guiding light Uploading a self-made file using [[Wikipedia:File_Upload_Wizard|File Upload Wizard]]
  1. N Davydova et al., Proc. SPIE 8166, 816624 (2011).
  2. R. Chao et al., Measurement and characterization of EUV mask performance at high-NA, EECS Department, Univ. of California, Berkeley Technical Report No. UCB/EECS-2013-56, 5/10/2013, Figure 5.
  3. X. Liu et al., Proc. SPIE 9048, 9040Q (2014).
  4. J. Ruoff, Proc. SPIE 7823, 78231N (2010).

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current16:27, 20 August 2019Thumbnail for version as of 16:27, 20 August 2019611 × 327 (85 KB)Dave louis johnTransferred from en.wikipedia (MTC!) (1.1.0)

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