File:Power die.svg
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Summary
| Description |
English: Aproximative dimensions and structure of a power semiconductor die. This is a 3-terminal device, with two terminals on the top (the emitter and base for a BJT, the gate and emitter for an IGBT, the source and gate for a power MOSFET). The remaining terminal (respectively collector, collector and drain) is on the back. |
| Date | Modified 2010-02-03 |
| Source | Own work |
| Author |
Cyril Buttay
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Licensing
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
  
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File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 17:32, 3 February 2010 | | 500 × 225 (21 KB) | Inductiveload | fixed text, resize to 500px and simplify paths |
| 08:56, 10 April 2006 |  | 1,052 × 525 (31 KB) | CyrilB~commonswiki | Cyril BUTTAY Aproximative dimensions and structure of a power semiconductor die. This is a 3-terminal device, with two terminals on the top (the emitter and base for a BJT, the gate and emitter for an IGBT, the source and gate for a power MOSFET). The re |
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